Zsolt Tokei

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Zsolt Tokei

  1. Zsolt Tőkei is on Facebook. Join Facebook to connect with Zsolt Tőkei and others you may know. Facebook gives people the power to share and makes the.
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  3. Zsolt Tokei: “Our work proves that subtractive metal etch – which was used in the past for integrating Al interconnects – can be a valid alternative to the damascene implementation of Ru. The integration scheme has a strong downscaling potential, and can be considered for.

Zsolt Tokei Imec


Maria Politou 1,2, a), Inge Asselberghs 2, Iuliana Radu 2, Thierry Conard 2, Olivier Richard 2, Chang Seung Lee 3, Koen Martens 2, Safak Sayan 2,4, Cedric Huyghebaert 2, Zsolt Tokei 2, Stefan De Gendt 1,2, and Marc Heyns 1,2. Zsolt Tőkei joined Imec, Leuven, Belgium, in 1999, as a Process Engineer in the field of copper low-k interconnects, the Head of the Metal Section, and then, he became a Principal Scientist and the Program Director of Nano-interconnects, and in 2016, he became a Distinguished Member of Technical Staff, where he was involved in the range of interconnect issues including scaling, metallization, electrical characterization, module integration, reliability, and system aspects.

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Zsolt tokei imec
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Information
About ADMETAPlus 2017
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Special issu of JJAP
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Advanced Metallization Conference 2017
27thAsian Session
Conference Invited Speakers

Conference Plenary Speaker:
1) A Glimpse of the Frontier of AI Research
Tamiya Onodera (IBM Research Tokyo)
2) Conductor trends for future interconnects
Zsolt Tokei (imec)
Conference Invited Speaker
1) Advanced Silicide/Germanide technology for sub-16/14 nm node devices
Jun Luo (Chinese Academy of Sciences)
2) Through-cobalt self-forming barrier copper interconnect and alternative conductor interconnects of cobalt and ruthenium for 7nm BEOL and beyond
Takeshi Nogami (IBM Research)
3) A prospect of metallization technology for future interconnects
Atsunobu Isobayashi (Toshiba)
4) Dielectric Atomic Layer Etching in high volume semiconductor manufacturing: Why now and how?
Gerardo Delgadino (Lam Research)
5) Selective atomic-level etching using two heating procedures, infrared irradiation, and ion bombardment, for next-generation semiconductor device manufacturing
Nobuya Miyoshi (Hitachi)
6) Tungsten CMP as Enabling Process for 14nm Transistor Scaling and Yield Enhancement
Hong Jin Kim (Globalfoundries)
7) Incorporate Graphene into Back End-of-Line for Better Cu Interconnects
Ling Li (Stanford University)
8) Robust nanoscale Cu interconnects coated by atomic-layer materials
Nguyen Thanh Cuong (NIMS)
9) The Critical Role and Application of Metallization Processes in Advanced Packaging
Rozalia Beica (Dow Chemical)
10) Challenges with join & interface integrity in next generation microelectronic packages
Vivek B. Dutta (EMD Performance Materials)
11) Chalcogenide superlattices for the next generation non-volatile memory
Junji Tominaga (AIST)